${\displaystyle GBWP={\frac {H_{0}}{\sqrt {\frac {\omega _{c}^{2}+25{\omega _{c}}^{2}}{\omega _{c}^{2}}}}}\cdot 5{\omega _{c}}={\frac {5}{\sqrt {26}}}{H_{0}}\cdot {\omega _{c}}=0.98\cdot {H_{0}}\cdot {\omega _{c}}}$

For transistors, the current-gain–bandwidth product is known as the f_T or transition frequency. It is calculated from the low-frequency (a few kilohertz) current gain under specified test conditions, and the cutoff frequency at which the current gain drops by 3 decibels (70% amplitude); the product of these two values can be thought of as the frequency at which the current gain would drop to 1, and the transistor current gain between the cutoff and transition frequency can be estimated by dividing f_T by the frequency. Usually, transistors must be applied at frequencies well below f_T to be useful as amplifiers and oscillators. In a bipolar junction transistor, frequency response declines owing to the internal capacitance of the junctions. The transition frequency varies with collector current, reaching a maximum for some value and declining for greater or lesser collector current.